TheE1–E2 center in gallium arsenide is the divacancy
نویسندگان
چکیده
منابع مشابه
The E1-E2 center in gallium arsenide is the divacancy.
Based on defect energy levels computed from first-principles calculations, it is shown the E1-E2 center in irradiated GaAs cannot be due to an isolated arsenic vacancy. The only simple intrinsic defect with levels compatible with E1 and E2 is the divacancy. The arsenic monovacancy is reassigned to the E3 center in irradiated GaAs. These new assignments are shown to reconcile a number of seeming...
متن کاملProgress to a Gallium-Arsenide Deep-Center Laser
Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we ...
متن کاملGallium Arsenide - Based Readout Electronics
The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...
متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2015
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/27/7/075801